 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MRW2020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRW2020 is a high performance common base RF power transistor intended for 28V operation across the 1 to 2.3 GHz frequency range. PACKAGE STYLE .250X.300 2L FLG FEATURES: * Gain: 5.2 dB Min. at 20 W * Output Power: 20 W * Diffused Ballast Resistors * OmnigoldTM Metalization System MAXIMUM RATINGS IC VCES VEBO PDISS TJ TSTG JC 4.0 A 50 V 3.5 V 60 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 3.0 C/W CHARACTERISTICS SYMBOL BVCES BVEBO ICBO hFE Cob GPB C TC = 25 C NONETEST CONDITIONS IC = 160 mA IE = 2.0 mA VCB = 28 V VCE = 5.0 V VCB = 28 V VCC = 28 V VCC = 28 V Load VSWR = :1, All Phase Angles POUT = 20 W IC = 800 mA f = 1.0 MHz f = 2.0 GHz f = 2.0 GHz MINIMUM TYPICAL MAXIMUM 50 3.5 --10 --5.2 40 ------------------2.0 100 24 ----- UNITS V V A --pF dB % No Degradation in Output Power A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
Price & Availability of MRW2020
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |